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The P6 power module has 750V and 1200V voltage levels, for 750V IGBT modules, the current levels include: 660A, 820A, 950A, for 1200V IGBT modules, the current levels include: 400A, 600A, to meet the needs of high power density of automotive systems.The module adopts a three-phase bridge circuit and a multi-chip parallel design inside, which has higher energy transmission efficiency.The IGBT module is designed with a low-inductance, high-efficiency heat dissipation package.The power terminals are packaged in a stacked package, which effectively reduces the inductance of line distribution.The module adopts two versions: pinfin liquid cooling substrate and flat substrate, and the module adopts high thermal conductivity, high reliability HPS and AMB thermal insulation substrate.The internal power terminal of the module adopts ultrasonic welding process technology to effectively improve the power cycling ability.The module adopts standard packaging form, which is compatible with domestic and foreign products.